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| NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 SEPTEMBER 1994 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt FXT458 B C E REFER TO ZTX458 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 100 100 15 50 5 MIN. 400 400 5 100 100 100 0.2 0.5 0.9 0.9 300 MHz pF SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. E-Line TO92 Compatible VALUE 400 400 5 300 1 -55 to +200 UNIT V V V nA nA nA V V V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=320V VCE=320V VEB=4V IC=20mA, IB=2mA IC=50mA, IB=6mA IC=50mA, IB=5mA IC=50mA, VCE=10V IC=1mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz UNIT V V V mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage 3-35 |
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